Three-dimensional angle-resolved photoemission study of bulk SiGe single crystals

The composition- and structure-dependent electronic band structure of SiGe alloys facilitates a rich variety its application in various fields. In this study, we performed high-resolution core-level angle-resolved photoemission spectroscopy (ARPES) unstrained single crystals with the (001) surface. Thermally cleaned surfaces exhibited double domain (2 × 1) reconstruction, wherein asymmetric dimer was composed Ge atoms, Si atoms were located below subsurface region. compositional dependence three valence bands their constant energy contours clearly resolved by three-dimensional ARPES measurements using high-intensity synchrotron radiation. could be well described composition-based interpolation parameters pristine crystals.